1,272 research outputs found

    Copper Metal for Semiconductor Interconnects

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    Resistance-capacitance (RC) delay produced by the interconnects limits the speed of the integrated circuits from 0.25 mm technology node. Copper (Cu) had been used to replace aluminum (Al) as an interconnecting conductor in order to reduce the resistance. In this chapter, the deposition method of Cu films and the interconnect fabrication with Cu metallization are introduced. The resulting integration and reliability challenges are addressed as well

    Probing the A1 to L10 Transformation in FeCuPt Using the First Order Reversal Curve Method

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    The A1- L10 phase transformation has been investigated in (001) FeCuPt thin films prepared by atomic-scale multilayer sputtering and rapid thermal annealing (RTA). Traditional x-ray diffraction is not always applicable in generating a true order parameter, due to non-ideal crystallinity of the A1 phase. Using the first-order reversal curve (FORC) method, the A1 and L10 phases are deconvoluted into two distinct features in the FORC distribution, whose relative intensities change with the RTA temperature. The L10 ordering takes place via a nucleation-and-growth mode. A magnetization-based phase fraction is extracted, providing a quantitative measure of the L10 phase homogeneity.Comment: 17 pages, 5 figures, 4 page supplementary material (4 figures
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